Spectroscopy of excitons and shallow impurities in isotopically enriched silicon : electronic properties beyond the virtual crystal approximationTHEWALT, M. L. W.Solid state communications. 2005, Vol 133, Num 11, pp 715-725, issn 0038-1098, 11 p.Article

C₇₀ vibrational frequencies obtained from singlet oxygen photoluminescenceHOROYSKI, P. J; THEWALT, M. L. W.Chemical physics letters. 1994, Vol 217, Num 4, pp 409-412, issn 0009-2614Article

Zeeman spectroscopy of an axial-double-acceptor bound exciton in GaAs grown by molecular-beam epitaxyVILLEMAIRE, A; STEINER, T; THEWALT, M. L. W et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 24, pp 13426-13434, issn 0163-1829Article

Uniaxial stress and magnetic field dependence of the In- and Tl-related isoelectronic bound excitons in SiWATKINS, S. P; THEWALT, M. L. W.Canadian journal of physics (Print). 1985, Vol 63, Num 8, pp 1074-1082, issn 0008-4204Article

Green and near-infrared luminescence due to the biexcitons in unperturbed siliconTHEWALT, M. L. W; MCMULLAN, W. G.Physical review. B, Condensed matter. 1984, Vol 30, Num 10, pp 6232-6234, issn 0163-1829Article

Subnanosecond transient studies of intrinsic and extrinsic luminescence in CdSeSTEINER, T; THEWALT, M. L. W.Canadian journal of physics (Print). 1985, Vol 63, Num 9, pp 1205-1211, issn 0008-4204Article

Optically detected librons and phonons in crystalline C₆₀HOROYSKI, P. J; THEWALT, M. L. W.Physical review. B, Condensed matter. 1993, Vol 48, Num 15, pp 11446-11449, issn 0163-1829Article

Optical properties of shallow defect-related acceptors in GaAs grown by molecular-beam epitaxyCHARBONNEAU, S; THEWALT, M. L. W.Physical review. B, Condensed matter. 1990, Vol 41, Num 12, pp 8221-8228, issn 0163-1829Article

Photoluminescence decay times of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxyCHARBONNEAU, S; STEINER, T; THEWALT, M. L. W et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 5, pp 2861-2864, issn 0163-1829Article

A high average-power quasi-continuous optical parametric oscillator systemTHEWALT, M. L. W; BECKETT, D. J. S.Canadian journal of physics (Print). 1988, Vol 66, Num 10, pp 868-870, issn 0008-4204Article

Photoluminescence lifetimes of the In, Tl and Bi bound excitons in siliconSTEINER, T; THEWALT, M. L. W.Solid state communications. 1984, Vol 49, Num 12, pp 1121-1123, issn 0038-1098Article

Far-infrared absorption spectrum of Be-related bound excitons in siliconLABRIE, D; TIMUSK, T; THEWALT, M. L. W et al.Physical review letters. 1984, Vol 52, Num 1, pp 81-84, issn 0031-9007Article

Photoluminescence studies of isotopically enriched siliconKARAISKAJ, D; THEWALT, M. L. W; RUF, T et al.Physica status solidi. B. Basic research. 2003, Vol 235, Num 1, pp 63-74, issn 0370-1972, 12 p.Conference Paper

Photoluminescence from excitons bound to a triple acceptor, Ge:CuNISSEN, M. K; STEELE, A. G; THEWALT, M. L. W et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 11, pp 7926-7928, issn 0163-1829Article

Photoluminescence studies of the EL2 defect in gallium arsenide under external perturbationsNISSEN, M. K; VILLEMAIRE, A; THEWALT, M. L. W et al.Physical review letters. 1991, Vol 67, Num 1, pp 112-115, issn 0031-9007, 4 p.Article

Radiative recombination in highly excited ZnSeCHARBONNAU, S; THEWALT, M. L. W; ISSHIKI, M et al.Solid state communications. 1988, Vol 67, Num 3, pp 187-191, issn 0038-1098Article

Resonant photoluminescence studies of the growth-induced defects in GaAs grown by molecular beam epitaxyCHARBONNEAU, S; MCMULLAN, W. G; THEWALT, M. L. W et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 5, pp 3587-3590, issn 0163-1829Article

Photoluminescence and infrared absorption studies of Ge doped with MgTHEWALT, M. L. W; LABRIE, D; CLAYMAN, B. P et al.Solid state communications. 1985, Vol 56, Num 9, pp 751-754, issn 0038-1098Article

Photoluminescence studies of the neutralization of acceptors in silicon by atomic hydrogenTHEWALT, M. L. W; LIGHTOWLERS, E. C; PANKOVE, J. I et al.Applied physics letters. 1985, Vol 46, Num 7, pp 689-691, issn 0003-6951Article

Epitaxy-substrate discrimination in the photoluminescence characterization of epitaxial SiSTEELE, A. G; THEWALT, M. L. W; HUFFMAN, J. E et al.Applied physics letters. 1988, Vol 53, Num 8, pp 666-668, issn 0003-6951Article

A second isoelectronic multiexciton center in annealed Czochralski siliconSTEELE, A. G; THEWALT, M. L. W; WATKINS, S. P et al.Solid state communications. 1987, Vol 63, Num 2, pp 81-84, issn 0038-1098Article

Discovery of polyexcitonsSTEELE, A. G; MCMULLAN, W. G; THEWALT, M. L. W et al.Physical review letters. 1987, Vol 59, Num 25, pp 2899-2902, issn 0031-9007Article

Ultrahigh-resolution photoluminescence studies of excitons bound to boron in silicon in magnetic fieldsKARASYUK, V. A; BRAKE, D. M; THEWALT, M. L. W et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 15, pp 9354-9360, issn 0163-1829Article

Photoluminescence studies of bound excitons in copper-doped GaAsVILLEMAIRE, A; CHARBONNEAU, S; STEINER, T et al.Journal of applied physics. 1990, Vol 67, Num 9, pp 4244-4248, issn 0021-8979, 1Article

Photoluminescence studies of Si implanted with In and/or Tl: the effects of thermal treatment and atomic HTHEWALT, M. L. W; STEINER, T; PANKOVE, J. I et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 498-502, issn 0021-8979Article